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| DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES * Ideal for 460 MHz to 2.4 GHz medium output power amplification * PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm * High collector efficiency: C = 60% * UHS0-HV technology (fT = 25 GHz) adopted * High reliability through use of gold electrodes * Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number 2SC5754 2SC5754-T2 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form * 8 mm wide embossed taping * Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10008EJ02V0DS (2nd edition) Date Published March 2003 CP(K) Printed in Japan The mark * shows major revised points. (c) NEC Compound Semiconductor Devices 2001, 2003 2SC5754 ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 13 5.0 1.5 500 735 150 -65 to +150 Unit V V V mA mW C C Tj Tstg Note Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB THERMAL RESISTANCE Parameter Junction to Ambient Resistance Symbol Rth j-a1 Test Conditions Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB Stand alone device in free air Ratings 170 Unit C/W C/W Rth j-a2 570 2 Data Sheet PU10008EJ02V0DS 2SC5754 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Reverse Transfer Capacitance Maximum Available Power Gain Linear Gain Gain 1 dB Compression Output Power Collector Efficiency fT S21e Cre 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VBE = 1 V, IC = 0 mA VCE = 3 V, IC = 100 mA - - 40 - - 60 1 000 1 000 100 nA nA - VCE = 3 V, IC = 100 mA, f = 0.5 GHz VCE = 3 V, IC = 100 mA, f = 2 GHz VCB = 3 V, IE = 0 mA, f = 1 MHz VCE = 3 V, IC = 100 mA, f = 2 GHz VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz, Pin = 0 dBm, 1/2 Duty VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty 16 5.0 - - - - - 20 6.5 1.0 12.0 12.0 26.0 60 - - 1.5 - - - - GHz dB pF dB dB dBm % Note 2 MAG Note 3 GL PO (1 dB) C Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = S21 (K - (K2 - 1) ) S12 hFE CLASSIFICATION Rank Marking hFE Value FB R57 40 to 100 Data Sheet PU10008EJ02V0DS 3 2SC5754 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance Cre (pF) 1 000 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2.0 f = 1 MHz 1.5 Total Power Dissipation Ptot (mW) Mounted on Polyimide PCB 800 (38 x 38 mm, t = 0.4 mm) 735 600 1.0 400 205 Stand alone device in free air 0.5 200 0 25 50 75 100 125 150 0 1 2 3 4 5 Ambient Temperature TA (C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1 000 100 10 1 0.1 0.01 VCE = 3 V COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 450 IB : 0.5 mA step 400 7 mA 6 mA 5 mA 4 mA 3 mA 2 mA 1 mA IB = 0.5 mA 5 6 Collector Current IC (mA) Collector Current IC (mA) 350 300 250 200 150 100 50 0.001 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 3 4 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 3 V DC Current Gain hFE 100 10 1 10 100 1 000 Collector Current IC (mA) 4 Data Sheet PU10008EJ02V0DS 2SC5754 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 30 25 20 15 10 5 0 0.1 |S21e|2 1 Frequency f (GHz) 10 MSG MAG VCE = 3 V IC = 100 mA 25 Gain Bandwidth Product fT (GHz) VCE = 3 V f = 0.5 GHz 20 15 10 5 0 1 10 100 1 000 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 VCE = 3 V f = 1 GHz MSG MAG 20 VCE = 3 V f = 2 GHz 15 |S21e|2 10 15 MSG 10 MAG 5 5 |S21e|2 0 1 10 100 1 000 0 1 10 100 1 000 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 VCE = 3 V f = 2.5 GHz 15 10 MSG MAG 5 |S21e|2 0 1 10 100 1 000 Collector Current IC (mA) Data Sheet PU10008EJ02V0DS 5 2SC5754 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 20 GP 15 10 5 0 -15 VCE = 3.2 V, f = 0.9 GHz ICq = 20 mA, 1/2 Duty Pout IC 200 150 100 50 300 250 Collector Current IC (mA), Collector Efficiency C (%) 30 25 20 VCE = 3.2 V, f = 2.4 GHz ICq = 20 mA, 1/2 Duty Pout 300 250 200 IC 150 15 10 5 GP 100 50 C -10 -5 0 5 10 C 0 -5 0 5 10 15 20 0 25 0 15 Input Power Pin (dBm) Input Power Pin (dBm) Collector Current IC (mA), Collector Efficiency C (%) 30 25 20 VCE = 3.2 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty Pout 300 250 200 IC 150 30 25 20 VCE = 3.2 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty Pout 300 250 200 IC 150 15 GP 10 5 15 GP 10 5 100 50 100 50 C 0 -10 -5 0 5 10 15 0 20 C 0 -10 -5 0 5 10 15 0 20 Input Power Pin (dBm) Input Power Pin (dBm) Collector Current IC (mA), Collector Efficiency C (%) 30 25 20 VCE = 3.6 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty Pout 300 250 200 IC 150 30 25 20 VCE = 3.6 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty Pout 300 250 200 IC 150 100 50 15 GP 10 5 15 GP 10 5 100 50 C 0 -10 -5 0 5 10 15 0 20 C 0 -10 -5 0 5 10 15 0 20 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 6 Data Sheet PU10008EJ02V0DS Collector Current IC (mA), Collector Efficiency C (%) Output Power Pout (dBm), Power Gain GP (dB) Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency C (%) Output Power Pout (dBm), Power Gain GP (dB) Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency C (%) Output Power Pout (dBm), Power Gain GP (dB) Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 2SC5754 POWER SUPPLY IMPEDANCE, LOAD IMPEDANCE (Recommended value) Frequency f (GHz) 0.9 1.8 2.4 Collector to Emitter Voltage VCE (V) 2.8 to 3.6 2.8 to 3.6 2.8 to 3.6 Supply Impedance ZS () 8.4 - 5.2 j 6.3 - 16.4 j 5.9 - 22.1 j Load Impedance ZL () 15.1 - 4.3 j 15.8 - 6.9 j 15.2 - 17.9 j ZL ZS ZS RF input line B E C GND GND Tr. E RF output line ZL f = 0.9 GHz f = 1.8 GHz ZL ZS ZS ZL f = 2.4 GHz ZL ZS Data Sheet PU10008EJ02V0DS 7 2SC5754 APPLICATION EXAMPLE (Low-cost PA solution) Bluetooth Power Class 1 f = 2.4 GHz T80 R57 0 dBm 13 dBm 22 dBm 2SC5509 2SC5754 SS Cordless Phone f = 2.4 GHz R57 20 dBm 26 dBm 2SC5754 DCS1800 (GSM1800) Cellular Phone f = 1.8 GHz A 3 9Z 00 1 R55 R57 5 dBm 16 dBm 25 dBm 35 dBm 2SC5753 2SC5754 NE5520379A (MOS FET) Cordless Phone f = 0.9 GHz TH R57 -3 dBm 9 dBm 25 dBm 2SC5434 (3-pin TUSMM) 2SC5754 8 Data Sheet PU10008EJ02V0DS 2SC5754 EVALUATION CIRCUIT EXAMPLE : 1.8 GHz PA EVALUATION BOARD PCB Pattern and Element Layout VB VC C2 C4 SL1 SL4 C3 SL2 SL3 SL5 Tr. (2SC5754) C5 RF in C1 C6 RF out Remarks 1. 38 x 38 mm, t = 0.4 mm, r = 4.55 double-sided copper-clad polyimide board 2. Back side : GND pattern 3. Solder plating on pattern 4. : Through holes Equivalent Circuit VB C2 VC C4 SL3 SL1 C1 RF in C3 SL2 Tr. SL4 SL5 C6 RF out C5 Parts List Parts C1, C6 C2 C3 C4 C5 SL1, SL4 SL2 SL3 SL5 18 pF 3 300 pF 3 pF 15 pF 1.5 pF w = 0.20 mm w = 0.76 mm, l = 2.5 mm w = 0.76 mm, l = 5 mm w = 0.76 mm, l = 1.5 mm Value Size Classification Multiplayer ceramic chip capacitor Multiplayer ceramic chip capacitor Multiplayer ceramic chip capacitor Multiplayer ceramic chip capacitor Multiplayer ceramic chip capacitor Strip line Strip line Strip line Strip line Data Sheet PU10008EJ02V0DS 9 2SC5754 EXAMPLE OF CHARACTERISTICS FOR 1.8 GHz PA EVALUATION BOARD Collector Current IC (mA), Collector Efficiency C (%) 30 25 20 VCE = 3.2 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty Pout 300 250 200 IC 150 30 25 20 VCE = 3.2 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty Pout 300 250 200 IC 150 100 50 15 10 5 GP 15 GP 10 5 100 50 C 0 -10 -5 0 5 10 15 0 20 C 0 -10 -5 0 5 10 15 0 20 Input Power Pin (dBm) Input Power Pin (dBm) Collector Current IC (mA), Collector Efficiency C (%) 30 25 20 15 10 5 VCE = 3.6 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty Pout IC 300 250 200 150 30 25 20 15 10 5 VCE = 3.6 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty Pout IC GP 300 250 200 150 100 50 GP 100 50 C 0 -10 -5 0 5 10 15 0 20 C 0 -10 -5 0 5 10 15 0 20 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.csd-nec.com/ 10 Data Sheet PU10008EJ02V0DS Collector Current IC (mA), Collector Efficiency C (%) Output Power Pout (dBm), Power Gain GP (dB) Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency C (%) Output Power Pout (dBm), Power Gain GP (dB) Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 2SC5754 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) 0.40+0.1 -0.05 2.05 0.1 0.30+0.1 -0.05 0.65 4 0.30 +0.1 -0.05 1.25 0.1 2 2.0 0.1 0.60 3 R57 1.25 0.65 0.59 0.05 0.30+0.1 -0.05 1 PIN CONNECTIONS 1. 2. 3. 4. Emitter Collector Emitter Base 0.11+0.1 -0.05 0.65 1.30 Data Sheet PU10008EJ02V0DS 11 2SC5754 * The information in this document is current as of March, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 12 Data Sheet PU10008EJ02V0DS 2SC5754 For further information, please contact NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 E-mail: ncsd-hk@elhk.nec.com.hk TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0302-1 |
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